solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sft501 __ __ __ sft503 __ __ __ scre ening 2 / __ = not screen tx = tx level txv = txv level s = s level polarity: __ = normal r = reverse package 3 / j = to-257, glass seals jc = to-257, ceramic seals sft501/j and sft503/j sft501/jc and sft503/jc series 5 amp 200 volts high speed pnp transistor features: ? fast switching ? hig h freq ue ncy, 80 mhz typ ical ? bvceo 150 volts min ? high linear gain ? low saturation voltage and leakage ? 200oc operating temperature ? gold eutectic die attach ? designed for complementary use with sft502/g and sft504/g maximum ratings symbol value units collector ? emitter voltage v ceo 150 volts collector ? base voltage v cbo 200 volts emitter ? base voltage v ebo 7 volts co ntinue s colle ctor curre nt i c 5 amps base current i b 1 amps power dissipation @ tc = 50oc derate above 50oc p d 10 66.6 w mw/oc operating & storage temperature top & tstg -65 to +200 oc maximum thermal resistance junction to case r jc 15 oc/w to-257 notes: * pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25oc. available part numbe rs: sft501/j sft501/jc sft503/j sft503/jc pin assignment code function pin 1 pin 2 pin 3 - normal collector emitter base r reverse collector base emitter note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. b17bh data sheet #: tr 0100a doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft501/j and sft503/j sft501/jc and sft503/jc series electrical characteristic 4 / symbol min typ max units collector ? emitter breakdown voltage i c = 50ma bv ceo 150 200 ?? volts collector ? base breakdown voltage i c = 200a bv cbo 200 275 ?? volts emitter ? base breakdown voltage i e = 200a bv eb o 7 13 ?? volts collector ? cutoff current v ce = 100 v i ceo ?? ?? 1.0 a collector ? cutoff current v cb = 100 v i cbo ?? ?? 500 na emitter ? cutoff current v eb = 6 v i eb o ?? ?? 500 na dc current gain * sft501 sft503 v ce = 5v, i c = 50ma v ce = 5v, i c = 2.5a v ce = 5v, i c = 5a v ce = 5v, i c = 50ma v ce = 5v, i c = 2.5a v ce = 5v, i c = 5a h fe 20 30 20 50 50 40 ?? ?? 70 ?? ?? 70 ?? ?? ?? ?? ?? ?? ?? collector ? emitter saturation voltage * i c = 2.5a, i b = 250ma i c = 5.0a, i b = 500ma v ce(sat) ?? ?? 0.35 0.6 0.75 1.5 vol ts base ? emitter saturation voltage * i c = 2.5a, i b = 250ma i c = 5.0a, i b = 500ma v be(sat) ?? ?? 1.0 1.2 1.3 1.5 vol ts curre nt gain ba ndwidt h pro duct v ce = 5v, i c = 0.5a, f = 10mhz f t 40 60 ?? mhz output ca pacita nce v cb = 10v, i e = 0a, f = 1mhz c ob ?? 130 225 pf input capacitance v be = 10v, i c = 0a, f = 1mhz c ib ?? 450 600 pf delay time t d ?? 25 50 nsec rise time t r ?? 40 250 nsec storage time t s ?? 320 600 nsec fall time v cc = 50v, i c = 5a, i b1 = i b2 = 0.5a t f ?? 130 300 nsec note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. b17bh data sheet #: tr 0100a doc
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